Soft Error Immune RHBD-14T SRAM Cell for Space and Satellite Applications

Deep sub-micron memory devices play a crucial role in space electronic applications due to their susceptibility single-event upset and double-node types of soft errors. When charged particle from hit scaled circuit, the critical charge sensitive storage nodes drops, node happens across nodes. This paper describes error immune RHBD-14T SRAM cell (SEI-14T) for satellite applications. The SEI-14T consists two latch circuits coupled self-recovering, state-restoring feedback manner. In addition, mitigate single event (SEU) all portion double upset. By considering area separation approach, remaining pairs were recovered. To show relative performance SEI-14T, state-of-the-art other radiation-resistant cells, such as Quatro-10T, RHM-12T, RHD-12T, RSP-14T, RHPD-12T, RH-14T, EDP-12T, QCCS-12T are considered. Compared mentioned has superior write stability, greater read stability than cells. Furthermore, at 0.8 V supply voltage, minimizes 23%, 12.28% 20.82% access time, time static power consumption respectively compared existing Moreover, was 6.56x/ 3.4x/ 5.75x/ 2.54x/ 2.47x/ 1.81x/ 1.63x/ 1.44x times larger Quatro-10T/ RHM-12T/ RHD-12T/ RSP-14T/ RHPD-12T/ RH-14T/ EDP-12T/